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Zowie Technology Corporation High Voltage Transistor
PNP Silicon
3 BASE 1 2 2 EMITTER COLLECTOR 3
MMBT5401
1
SOT-23
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -150 -160 -5.0 -500 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C
(1)
Symbol TA=25 C
o
Max. 225 1.8 556 300 2.4 417 -55 to +150
Unit mW mW / oC
o
PD R JA
Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature
(2)
C/W
TA=25 C
o
PD R JA TJ,TSTG
mW mW / oC
o
C/W o C
DEVICE MARKING MMBT5401=2L ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Characteristic Symbol Min. Max. Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage ( IC = 1.0mAdc, IB = 0 ) V(BR)CEO -150 Vdc
Collector-Base Breakdowe Voltage ( IC = -100 uAdc, IE = 0 )
V(BR)CBO
-160
-
Vdc
Emitter-Base Breakdowe Voltage ( IE = -10 uAdc, IC = 0 ) Collector Cutoff Current ( VCE= -120 Vdc, IE = 0 ) ( VCE= -120 Vdc, IE = 0, TA = 100 C )
(1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
o
V(BR)EBO
-5.0
-
Vdc
ICES
-
-50 -50
nAdc uAdc
REV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued)
Characteristic Symbol Min. Max. Unit
ON CHARACTERISTICS
DC Current Gain ( IC= -1.0 mAdc, VCE= -5.0 Vdc ) ( IC= -10 mAdc, VCE= -5.0 Vdc ) ( IC= -50 mAdc, VCE= -5.0 Vdc ) Collector-Emitter Saturation Voltage ( IC= -10 mAdc, IB= -1.0 mAdc ) ( IC= -50 mAdc, IB= -5.0 mAdc ) Base-Emitter Saturation Voltage ( IC= -10 mAdc, IB= -1.0 mAdc ) ( IC= -50 mAdc, IB= -5.0 mAdc )
HFE
50 60 50
240 -
-
VCE(sat)
-
-0.2 -0.5
Vdc
VBE(sat)
-
-1.0 -1.0
Vdc
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product ( IC= -10 mAdc, VCE= -10 Vdc, f=100 MHZ ) Output Capacitance ( VCB= -10 Vdc, IE=0, f=1.0 MHZ ) Small-Signal Current Gain ( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 MHZ ) Noise Figure ( VCE= -5.0 Vdc, IC= -200 uAdc, RS= 10 ohms, f=1.0 kHZ ) fT 100 300 MHZ
Ccb
-
6.0
pF
hfe
40
200
-
NF
-
8.0
dB
REV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
MMBT5401
200
hFE, NORMALIZED CURRENT GAIN
150
TJ = 125 C
o
100
TJ = 25 C
o
70 50
o
TJ = 55 C
30
VCE = -1.0 V VCE = -5.0 V
20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IC = 1.0mA IC = 10mA IC = 30mA IC = 100mA TJ= 25 C
o
IB, BASE CURRENT ( mA )
Figure 2. Collector Saturation Region
10
3
IC, COLLECTOR CURRENT (uA)
10 10 10
2
VCE = 30 V
IC = ICES
1
TJ = 125 C
0
o
10 10
-1
TJ = 75 C
o
-2
REVERSE o TJ = 25 C
FORWARD
10
-3
0.3
0.2
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VBE, BASE - EMITTER VOLTAGE (VOLTS)
Figure 18. Temperature Coefficients
REV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
MMBT5401
TEMPERATURE COEFFICIENTS (mV / C)
1.0
TJ= 25 C
o
2.5 2.0 1.5 1.0 0.5
0.9
TJ= -55 C to 135 C
o
o
V, VOLTAGE ( VOLTS )
0.8 0.7 0.6 0.5 0.4 0.3 0.2
VCE(SAT) @ IC/IB = 10 VBE(SAT) @ IC/IB = 10
o
VC
for VCE(sat)
0 -0.5 -1.0 -1.5
VB
0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
for VBE(sat)
V,
-2.0 -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT ( mA )
IC, COLLECTOR CURRENT ( mA )
Figure 4. " On " Voltages
Figure 5. Temperature Coefficients
100
VBB + 8.8V 10.2V 100 Vin 0.25 uF 3.0 k RC Vout 10 uS INPUT PULSE 5.1 k tr, tf 10 nS Vin 100 1N914 RB VCC -30 V
70 50
TJ= 25 C
o
C, CAPACITANCE ( pF )
30 20 10 7.0 5.0
Cobo Cibo
3.0 2.0 1.0 0.2
DUTY CYCLE = 1.0%
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
VALUES SHOWN ARE FOR IC @ 10 mA
VR, REVERSE VOLTAGE ( VOLTS )
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000 700 500 300
IC/IB = 10 o TJ= 25 C tr @ VCC = 120 V
2000 1000 700 500
IC/IB = 10 o TJ= 25 C
tf @ VCC = 120 V
t, TIME ( nS )
200 100 70 50 30 20 10 0.2 0.3 0.5
td @ VBE(off) = 1.0 V VCC = 120 V
tf @ VCC = 30 V
t, TIME ( nS )
tr @ VCC = 30 V
300 200 100 70 50 30
tf @ VCC = 120 V
1.0
2.0 3.0 5.0
10
20 30
50
100
200
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
IC, COLLECTOR CURRENT ( mA )
IC, COLLECTOR CURRENT ( mA )
Figure 8. Turn - On Time
Figure 9. Turn - Off Time
REV. : 0
Zowie Technology Corporation

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